IGBT Power FUJI 7MBR25SA120-50 New Original Module

1、7MBR25SA120-50 Product picture

2、7MBR25SA120-50 Core parameters and characteristics

(1) Electrical parameters: 

· Rated voltage and current:

The rated voltage of the collector-emitter is 1200V, and the rated current of the collector is 35A (some information is marked as 25A, which may be related to the specific package or batch), which is suitable for medium, high voltage and high current industrial scenarios.

· Package form:

It adopts a modular package with a pin count of 24. The main material of the package is not clear, but it is usually a ceramic or resin substrate to ensure heat dissipation and electrical insulation properties.

(2) Performance characteristics: 

· Low conduction voltage drop:

At the rated current, the conduction voltage is reduced, which can reduce power loss and improve system efficiency.

· Fast switching speed:

The IGBT structure combines the advantages of the high input impedance of the MOSFET with the reduced conduction voltage of the bipolar transistor. The switching speed is fast and suitable for high-frequency applications.

· High reliability:

built-in protection functions such as over-temperature, overcurrent, and short circuit to improve system stability.