IGBT FP75R12KT4-B16 power module

1、FP75R12KT4-B16 Product picture

2、FP75R12KT4-B16 Product advantage

· High reliability and high power density:

The use of grooved field cut-off IGBT technology, combined with the fourth-generation emitter control diode, significantly reduces static and dynamic losses, while improving power density, suitable for high-power application scenarios.

· Optimize thermal design:

The copper substrate and the low-stray inductance module are designed to cooperate with the thermal interface material to achieve efficient heat dissipation, ensure the stable operation of the device in a high temperature environment, and extend the service life.

· Low switching loss and high switching frequency: 

Fast TRENCHSTOP™ IGBT4 technology significantly reduces switching losses, supports high-frequency switching operation, improves system efficiency, and reduces electromagnetic interference (EMI).

· High current density and low saturation voltage drop:

Maintain a low Vce (on) (2.25V@15V, 75A) at 150A current to reduce conduction loss and improve system efficiency, especially for motor drive and inverter applications.