BSM50GD120DN2 IGBT module
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BSM50GD120DN2 IGBT module
1、BSM50GD120DN2 Product picture
2、BSM50GD120DN2 Basic parameters
【1】 Polarity/channel type: N-CHANNEL
【2】 Maximum collector current (IC): 72A
【3】 Maximum collector-emitter voltage (V(BR)CES): 1200V
【4】 Gate-emitter maximum voltage: 20V
【5】 Number of components: 6
【6】 Number of terminals: 17
【7】 Maximum operating temperature: 150°C
【8】 Maximum power dissipation: 350W
BSM50GD120DN2 IGBT module
1、BSM50GD120DN2 Product picture
2、BSM50GD120DN2 Basic parameters
【1】 Polarity/channel type: N-CHANNEL
【2】 Maximum collector current (IC): 72A
【3】 Maximum collector-emitter voltage (V(BR)CES): 1200V
【4】 Gate-emitter maximum voltage: 20V
【5】 Number of components: 6
【6】 Number of terminals: 17
【7】 Maximum operating temperature: 150°C
【8】 Maximum power dissipation: 350W
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Testing
Packaging
BSM50GD120DN2 IGBT module
1、BSM50GD120DN2 Product picture
2、BSM50GD120DN2 Basic parameters
【1】 Polarity/channel type: N-CHANNEL
【2】 Maximum collector current (IC): 72A
【3】 Maximum collector-emitter voltage (V(BR)CES): 1200V
【4】 Gate-emitter maximum voltage: 20V
【5】 Number of components: 6
【6】 Number of terminals: 17
【7】 Maximum operating temperature: 150°C
【8】 Maximum power dissipation: 350W
04/20/2024, By
04/20/2024, By
04/20/2024, By
04/20/2024, By
04/20/2024, By
04/20/2024, By
04/20/2024, By
04/20/2024, By
04/20/2024, By
04/20/2024, By
